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英国布里斯托大学博士后职位——功率半导体器件

2025年02月19日
来源:知识人网整理
摘要:

英国布里斯托大学博士后职位——功率半导体器件

布里斯托大学(University of Bristol),简称布大,始建于1876年,位于英格兰西南部城市布里斯托,是一所公立研究型大学。

布里斯托大学是红砖大学、罗素大学集团、科英布拉集团、世界大学联盟、国际大学气候联盟、欧洲大学协会成员。

布里斯托大学2024QS世界大学排名第55名,2020软科世界大学学术排名第64名,2023泰晤士高等教育世界大学排名第76名,2021U.S. News世界大学排名第86名。

Senior Research Associate in Power Semiconductor Devices

University of Bristol - School of Electrical, Electronic and Mechanical Engineering

Bristol, United Kingdom

The role

Applications are invited for the role of Postdoctoral Researcher at the UKRI Innovation and Knowledge Centre (IKC) Transforming Net Zero with Ultrawide Bandgap Semiconductor Device Technology (REWIRE) to provide leading contributions to electrical characterization of wide and ultra-wide bandgap semiconductor materials and devices, including SiC, GaN, Gallium Oxide, and diamond, as key enabling materials for power and RF electronics.

At REWIRE, our aim is to accelerate the UK’s ambition for net zero by transforming the next generation of high voltage electronic devices using wide/ultra-wide bandgap compound semiconductors. Led by Bristol (Academic Director: Professor Kuball) with partners Cambridge and Warwick Universities, REWIRE will develop high-voltage power semiconductor devices, essential building blocks for ultra-high voltage (UHV) net-zero enabling all-electric vehicles, charging infrastructure, renewable energy and their High Voltage Direct Current (HVDC) grid connections.

We are seeking a motivated interdisciplinary researcher to join the Electrical Energy Management Research Group, University of Bristol, to develop high-performance power electronics for wide- and ultrawide- bandgap devices, and electrothermal analysis and characterisation of power devices the associated high-speed sensing and gate driving chips. You will become part of interactive team of PhDs and Post-doctorate researchers in the power electronics group.

What will you be doing?

You will conduct research in the electrical characterization and testing of wide and ultra-wide bandgap materials and devices and develop device TCAD models for device design and to complement experiments.

The successful candidate will work in renowned research team who carry out experimental research across high performance power conversion in electric vehicles and wind turbines, wide-bandgap power semiconductor devices, reliability analysis of semiconductor devices, ultra-fast switching with GaN and SiC, active EMI mitigation, record-breaking high-resolution active gate driving and sensing.

You will work with external stakeholders, in particular industry, as well as academic partners within REWIRE and will engage with senior management of REWIRE, to seek further industrial project opportunities.

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