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丹麦科技大学招聘光电工程发光二级管方向博士后
文章来源:知识人网整理       更新时间:2015年03月04日

Department of Photonics Engineering at the Technical University of Denmark is seeking a candidate for a 2-year (with the possibility of an extension) Postdoc position in the field of light-emitting diodes (LED). The position is funded by the project “A new type of white light-emitting diode using fluorescent silicon carbide ” (LEDSiC).

Summary of the project LEDSiC
Light-emitting diodes (LEDs) light source is emerging as the future market leader in both indoor and outdoor lighting due to its high energy efficiency, good light quality, long lifetime, and good technical functionality like being a transmitter for visible light communication. This project is going to explore a new type of white LED, which uses fluorescent silicon carbide (f-SiC) as the wavelength conversion material. Compared to the widely used phosphors, f-SiC only contains earth-abundant material, is very robust, and a better substrate than Sapphire for the epitaxial GaN growth on top. Therefore, the new white LED based on f-SiC is going to further reduce the energy consumption and CO2 emission. In this project, the full potential of this new type of LED will be explored in different levels of materials, devices and modules oriented for applications in general lighting through the collaboration of top scientists from Europe and China, with involvement of industrial partners. It is expected that the new f-SiC LED will promote the adoption of the LED technology.

Responsibilities and tasks
The selected postdoc candidate will participate in a project team of 1 postdoc and 2 PhD students hired specifically on the project, in addition to the participating senior staff. The postdoc will specifically be in charge of the demonstration of the high-efficiency LED devices after the f-SiC growth and GaN MOCVD growth developed by the other partners/work packages in the project . The candidate will also be co-supervisor of a PhD student on the LED device fabrication and characterization.

The candidate is thus expected to do:

  • High efficiency GaN LED growth on f-SiC by using MOCVD
  • Material characterization of the grown GaN LED by using SEM, TEM, X-ray diffraction, etc.
  • Optical characterization of the complete LED device by using electroluminescence for efficiency and CRI, etc.
  • Supervision of a Ph.D student on the LED device fabrication and characterization

Qualifications
Candidates should preferably have a PhD degree in photonics or equivalent. In addition we expect candidates to:

  • Be fluent in English
  • Have good experience with optoelectronic devices
  • Be willing to work in close collaboration with an internal project team and with external international partners
  • Be willing to supervise PhD, Master and Bachelor students.

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