新加坡-麻省理工学院研究与科技联盟(智能)中心基于III-V的LED器件的cmos兼容制造技术的发展方向博士后

Job Description

Project Overview

Within the project titled “CMOS + InGaP LED platform”, we aim to develop novel and high performance light emitting devices for future smart lighting and lifi applications as well as on-chip interconnect systems. Specifically, this project focuses on the development of CMOS-compatible fabrication technologies of InGaP LEDs on silicon substrates. Part of our research agenda involves collaboration with colleagues and industry to realize 200-mm-wafer-size Si-CMOS and III-V integration.

Job Responsibilities

The Low Energy Electronic Systems Interdisciplinary Research Group (LEES IRG) is currently seeking a Postdoctoral Associate or Senior Postdoctoral Associate to work on the development of CMOS-compatible fabrication technologies of III-V based LED devices. The job is based at the SMART Centre in Singapore and needs to be filled by the end of September 2018. The job scope are as follows:

• Develop and optimize MOCVD growth techniques for III-V-on-Si materials and devices;
• Layout design, process development, fabrication, characterization, device physics study and simulation of InGaP and related semiconductor materials based optical devices for next-generation communications and lighting applications;
• Research and development of Si-CMOS compatible fabrication technologies for III-V semiconductor materials, including Au-free metallization;
• Collaboration with universities and industry to realize 200-mm-wafer-size Si-CMOS and III-V integration;
• Develop new device structures and fabrication technologies to generate publications and patents.

Requirements

• PhD degree in materials science, microelectronics, applied physics or a related field.
• Post-doctoral experience welcome.
• Experience in MOCVD semiconductor epitaxial growth and MOCVD tool maintenance
• Semiconductor fabrication experience in a cleanroom, using tools including but not limited to mask aligner, wet bench, dry etcher, e-beam evaporator, sputter, PECVD, RTA, E-beam lithography etc.
• Knowledge of materials physics about indium gallium phosphide (InGaP) and related semiconductor materials.
• Knowledge of semiconductor materials characterization, including but not limited to: X-ray diffraction (XRD), photoluminescence (PL) and electroluminescence (EL) and scanning electron microscopy (SEM).
• Knowledge of ray optics and guided optics concepts, design basics of photodetectors and light emitters.
• Programming with MATLAB, Labview etc is preferred.
• Experience with physics-based semiconductor CAD software, e. g. Silvaco TCAD is preferred.
• Good command of written and spoken English.


To apply, please visit our open positions website at: https://smart.mit.edu/careers/career-opportunities. Interested applicants must submit their full CV/resume cover letter and a list of three references (name and contact information). We regret that only shortlisted candidates will be notified.