荷兰埃因霍温科技大学纳米光子学和纳米激光博士后职位

2014年06月12日

来源：知识人网整理

摘要：

Densely-integrated optical interconnects on silicon chips will be needed in order to solve the interconnect bottleneck and sustain the continued growth of computing power and communication bandwidth. Such optical interconnects demand the development of a new generation of nanophotonic structures operating at ultralow energies and high speed. Photonic crystals, plasmonic structures and their combination will represent essential building blocks of this future integration technology. Nanophotonic components operating at the sub-wavelength level and close to the quantum level present fascinating new physical phenomena, including the modification of spontaneous emission, the production of nonclassical light states, etc., areas where our group is very active. A particularly interesting device is the nanolaser, pionereed in Eindhoven [1], where photons and carriers are both confined in a sub-wavelength cavity. This is expected to lead to a wealth of new effects, related to the modified spontaneous emission rate, the extreme spatial hole burning and the modified electron-photon interaction. These physical effects play a major role in determining the efficiency and modulation speed and their understanding is therefore vital to the design of nanolasers for interconnect applications. Our group has a joint project with Prof. Smit's group in the Electrical Engineering (EE) department with the goal of fabricating and investigating the physics of a novel generation of nanolasers.

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